Ionizing radiation effects in copper indium gallium diselenide thin-film solar cells
Identifieur interne : 00E645 ( Main/Repository ); précédent : 00E644; suivant : 00E646Ionizing radiation effects in copper indium gallium diselenide thin-film solar cells
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Abstract
Cu(In,Ga)Se2/CdS/ZnO thin-film solar cells were exposed to doses up to 5×108rad(Si) of 50 keV x rays. Device performance consistently showed very little degradation, implying that previously observed radiation-induced performance reductions were likely the result of displacement damage. Subsequent experiments showed that cells recovered to near beginning-of-life performance with only short anneals under 50°C. © 2002 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Ionizing radiation effects in copper indium gallium diselenide thin-film solar cells</title><author><name sortKey="Tringe, J" uniqKey="Tringe J">J. Tringe</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>U.S. Air Force Research Laboratory, Space Vehicles Directorate, Kirtland AFB, New Mexico 87117</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>U.S. Air Force Research Laboratory, Space Vehicles Directorate, Kirtland AFB</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>The Aerospace Corporation, P.O. Box 9045, Albuquerque, New Mexico 87119</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>The Aerospace Corporation, P.O. Box 9045, Albuquerque</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Delaware</region></placeName><wicri:cityArea>Institute of Energy Conversion, University of Delaware, Newark</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="05"><s1>The Aerospace Corporation, P.O. Box 9045, Albuquerque, New Mexico 87119</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>The Aerospace Corporation, P.O. Box 9045, Albuquerque</wicri:cityArea></affiliation></author><author><name sortKey="Nocerino, J" uniqKey="Nocerino J">J. Nocerino</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>U.S. Air Force Research Laboratory, Space Vehicles Directorate, Kirtland AFB, New Mexico 87117</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>U.S. Air Force Research Laboratory, Space Vehicles Directorate, Kirtland AFB</wicri:cityArea></affiliation></author><author><name sortKey="Tallon, R" uniqKey="Tallon R">R. Tallon</name></author><author><name sortKey="Kemp, W" uniqKey="Kemp W">W. Kemp</name></author><author><name sortKey="Shafarman, W" uniqKey="Shafarman W">W. Shafarman</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>U.S. Air Force Research Laboratory, Space Vehicles Directorate, Kirtland AFB, New Mexico 87117</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>U.S. Air Force Research Laboratory, Space Vehicles Directorate, Kirtland AFB</wicri:cityArea></affiliation></author><author><name sortKey="Marvin, D" uniqKey="Marvin D">D. Marvin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>U.S. Air Force Research Laboratory, Space Vehicles Directorate, Kirtland AFB, New Mexico 87117</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>U.S. Air Force Research Laboratory, Space Vehicles Directorate, Kirtland AFB</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0054170</idno><date when="2002-01-01">2002-01-01</date><idno type="stanalyst">PASCAL 02-0054170 AIP</idno><idno type="RBID">Pascal:02-0054170</idno><idno type="wicri:Area/Main/Corpus">00FF45</idno><idno type="wicri:Area/Main/Repository">00E645</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term><term>Cadmium compounds</term><term>Copper compounds</term><term>Experimental study</term><term>Gallium compounds</term><term>Indium compounds</term><term>Semiconductor thin films</term><term>Solar cells</term><term>Ternary semiconductors</term><term>X-ray effects</term><term>Zinc compounds</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8460J</term><term>6180C</term><term>6182F</term><term>6172C</term><term>Etude expérimentale</term><term>Effet RX</term><term>Cellule solaire</term><term>Semiconducteur ternaire</term><term>Cuivre composé</term><term>Indium composé</term><term>Gallium composé</term><term>Cadmium composé</term><term>Zinc composé</term><term>Couche mince semiconductrice</term><term>Recuit</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Cu(In,Ga)Se<sub>2</sub>/CdS/ZnO thin-film solar cells were exposed to doses up to 5×10<sup>8</sup>rad(Si) of 50 keV x rays. Device performance consistently showed very little degradation, implying that previously observed radiation-induced performance reductions were likely the result of displacement damage. Subsequent experiments showed that cells recovered to near beginning-of-life performance with only short anneals under 50°C. © 2002 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>91</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Ionizing radiation effects in copper indium gallium diselenide thin-film solar cells</s1></fA08><fA11 i1="01" i2="1"><s1>TRINGE (J.)</s1></fA11><fA11 i1="02" i2="1"><s1>NOCERINO (J.)</s1></fA11><fA11 i1="03" i2="1"><s1>TALLON (R.)</s1></fA11><fA11 i1="04" i2="1"><s1>KEMP (W.)</s1></fA11><fA11 i1="05" i2="1"><s1>SHAFARMAN (W.)</s1></fA11><fA11 i1="06" i2="1"><s1>MARVIN (D.)</s1></fA11><fA14 i1="01"><s1>U.S. Air Force Research Laboratory, Space Vehicles Directorate, Kirtland AFB, New Mexico 87117</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>The Aerospace Corporation, P.O. Box 9045, Albuquerque, New Mexico 87119</s1></fA14><fA14 i1="03"><s1>U.S. Air Force Research Laboratory, Space Vehicles Directorate, Kirtland AFB, New Mexico 87117</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="04"><s1>Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716</s1></fA14><fA14 i1="05"><s1>The Aerospace Corporation, P.O. Box 9045, Albuquerque, New Mexico 87119</s1></fA14><fA20><s1>516-518</s1></fA20><fA21><s1>2002-01-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2002 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>02-0054170</s0></fA47><fA60><s1>P</s1><s3>CR</s3></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Cu(In,Ga)Se<sub>2</sub>/CdS/ZnO thin-film solar cells were exposed to doses up to 5×10<sup>8</sup>rad(Si) of 50 keV x rays. Device performance consistently showed very little degradation, implying that previously observed radiation-induced performance reductions were likely the result of displacement damage. Subsequent experiments showed that cells recovered to near beginning-of-life performance with only short anneals under 50°C. © 2002 American Institute of Physics.</s0> </fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="3"><s0>001B60A80C</s0></fC02><fC02 i1="03" i2="3"><s0>001B60A82F</s0></fC02><fC02 i1="04" i2="3"><s0>001B60A72C</s0></fC02><fC02 i1="05" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>8460J</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>6180C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>6182F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>6172C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Effet RX</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>X-ray effects</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Cellule solaire</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Solar cells</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Semiconducteur ternaire</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Ternary semiconductors</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Cuivre composé</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Copper compounds</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Cadmium composé</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Cadmium compounds</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Zinc composé</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Zinc compounds</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Couche mince semiconductrice</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Semiconductor thin films</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Recuit</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Annealing</s0></fC03><fN21><s1>021</s1></fN21><fN47 i1="01" i2="1"><s0>0201M000839</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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